Download Semiconductor Assignment pdf for JEE & NEET
DOWNLOAD SEMICONDUCTOR ASSIGNMENT PDF
1. In a
p-n junction diode, change in temperature due to heating
(a) affects only
reverse resistance
(b) affects only
forward resistance
(c) does not affect
resistance of p-n junction
(d) affects the
overall V-I characteristics of p-n junction
Answer (d)
2. The
barrier potential of a p-n junction depends on
(i) type of
semiconductor material
(ii) amount of doping
(iii) temperature
Which one of the
following is correct ?
(a) (i) and (ii) only
(b) (ii) only
(c) (ii) and (iii)
only (d) (i), (ii) and (iii)
Answer (d)
3. In a
n-type semiconductor, which of the following statement is true?
(a) Electrons are
majority carriers and trivalent atoms are dopants
(b) Electrons are
minority carriers and pentavalent atoms are dopants
(c) Holes are
minority carriers and pentavalent atoms are dopants
(d) Holes are
majority carriers and trivalent atoms are dopants
Answer (c)
4. C
and Si both have same lattice structure, having 4 bonding electrons in each.
However, C isi insulator whereas Si
is intrinsic semiconductor. This is because
(a) In case of C, the
valence band is not completely filled at absolute zero temperature
(b) In case of C, the
conduction band is partly filled even at absolute zero temperature
(c) The four bonding
electrons in the case of C lie in the second orbit, whereas in the case of Si they lie in the third
(d) The four bonding
electrons in the case of C lie in third orbit, whereas for Si they lie in the fourth orbit.
Answer (c)
5. If a
small amount of antimony is added to germanium crystal.
(a) the antimony
becomes an acceptor atom.
(b) there will be
more free electrons than holes in the semiconductor.
(c) its resistance is
increased.
(d) it becomes a
p-type semiconductor.
Answer (b)
6. In
forward biasing of the p-n junction
(a) the positive
terminal of the battery is connected to p-side and the depletion region becomes thick.
(b) the positive
terminal of the battery is connected to n-side and the depletion region becomes thin
(c) the positive
terminal of the battery is connected to n-side and the depletion region becomes thick.
(d) the positive
terminal of the battery is connected to p-side and the depletion region becomes thin.
Answer (d)
7. In a
semiconductor, it is found that 4/5th of the total current is carried by
electrons and the remaining 1/5th by
the holes. If at this temperature, the drift speed of electrons is 2.5 times
that of holes, the ratio
of the number densities of electrons and holes is
(a) 8/5 (b) 5/8
(c) 25/8 (d) ½
Answer (a)
8. The
barrier potential in a pn junction is 0.4 V. The current required is 5
mA. What is the emf of a cell which can be
used in a circuit if a resistance of 300 ohm is
connected in series with the junction
(a) 2.0 V (b) 1.9 V
(c) 1.5 V (d) 1.1 V
Answer (b)
For previous year problems
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